Part Number Hot Search : 
MP7001 VLB2020 CXA2506 IRFP452 BLF17 P13NK60 B40K275 B82615
Product Description
Full Text Search
 

To Download US5L10 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 US5L10
Transistors
General purpose transistor (isolated transistor and diode)
US5L10
A 2SD2674 and a RB461F are housed independently in a TUMT5 package.
Applications DC / DC converter Motor driver
Dimensions (Unit : mm)
2.0
Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package
ROHM:TUMT5 Abbreviated symbol:L10
Structure Silicon epitaxial planar transistor Schottky barrier diode
Equivalent circuit
(5) (4)
Di2 Tr1
(1)
(2)
(3)
Packaging specification s
Type Package Marking Code Basic ordering unit(pieces) US5L10 TUMT5 L10 TR 3000
Rev.B
0.2Max.
1.3
1/4
US5L10
Transistors
Absolute maximum ratings (Ta=25C) Tr1
Limits Symbol 15 VCBO VCEO 12 VEBO 6 IC 1.5 Collector current ICP 3 Power dissipation 0.9 Pc Junction temperature Tj 150 Range of storage temperature Tstg -40 to +125 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
1 Single pulse, Pw=1ms. 2 Mounted on a 25mmx25mmx t 0.8mm ceramic substrate
Unit V V V A 1 A W/ELEMENT 2 C C
Di2
Parameter Symbol Average rectified forward current IF Forward current surge peak (60HZ, 1) IFSM Reverse voltage (DC) VR Junction temperature Tj Range of storage temperature Tstg Peak reverse voltage VRM Power dissipation PD
Mounted on a 25mmx25mmx t 0.8mm ceramic substrate
Limits 700 3 20 125 -40 to +125 25 0.5
Unit mA A V C C V W/ELEMENT
Tr1& Di2
Parameter Total power dissipation Symbol PD Limits 0.4 1.0 Unit W/TOTAL W/TOTAL
1 2
1 Each terminal mounted on a recommended land 2 Mounted on a 25mmx25mmx t 0.8mm ceramic substrate
Electrical characteristics (Ta=25C) Tr1
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
Pulsed
Symbol Min. BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 15 12 6 - - - 270 - -
Typ. Max. Unit - - - - - 85 - 400 12 - - - 100 100 200 680 - - V V V nA nA mV - pF IC=10A IC=1mA IE=10A VCB=15V VEB=6V
Conditions
IC/IB=500mA/25mA VCE/IC=2V/200mA VCB=10V, IE=0A, f=1MHz
MHz VCE=2V, IE=-200mA, f=100MHz
Di2
Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - - - Typ. 450 - 9 Max. 490 200 - Unit mV A ns IF=700mA VR=20V IF=IR=100mA, Irr=0.1IR Conditions
Rev.B
2/4
US5L10
Transistors
Electrical characteristic curves Tr1
BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
Ta=100C
Ta=-40C Ta=25C Ta=100C
IC/IB=20/1 IC/IB=20 Pulsed VBE(sat)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1000
10
1 Ta=25C VCE=2V
DC CURRENT GAIN : hFE
1
Ta=25C
Ta=-40C
0.1
100
0.1
Ta=100C Ta=25C Ta=-40C
IC/IB=50/1
VCE(sat) 0.01
0.01
IC/IB=20/1 IC/IB=10/1
10 0.001
VCE=2V Pulsed
0.01
0.1
1
10
0.001 0.001
0.01
0.1
1
10
0.001 0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current
Fig.3 Collector-emitter saturation voltage vs. collector current
10
COLLECTOR CURRENT : IC (A)
1
TRANSITION FREQUENCY : fT (MHz)
VCE=2V Pulsed
1000
1000 Ta=25C VCE=2V f=100MHz
SWITCHING TIME : (ns)
100
tstg
Ta=100C
0.1
Ta=25C
100
10
tdon tf tr
0.01
Ta=-40C
0.001 0
0.5
1.0
1.5
10 -0.001
VCE=2V Ta=25C Pulsed
-0.01
-0.1
-1
-10
1 0.01
0.1
1
10
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC (A)
Fig.4 Grounded emitter propagation characteristics
Fig.5 Gain bandwidth product vs. emitter current
Fig.6 Switching time
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
100
Cib
IE=0A f=1MHz Ta=25C
Cob
10
1 0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
Rev.B
3/4
US5L10
Transistors
Di2
10 1000m 100m 1
C
FORWARD CURRENT : IF (A)
REVERSE CURRENT : IR (A)
Ta=125C
10m 1m 100
Ta=25C
100m
=1 Ta
25
Ta =2 5
10m
Ta =- 25 C
C
10 1 0.1
Ta=-25C
1m
0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF (V)
0
10
20
30
40
50
60
70
REVERSE VOLTAGE : VR (V)
Fig.9 Forward characteristics
Fig.10 Reverse characteristics
Rev.B
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


▲Up To Search▲   

 
Price & Availability of US5L10

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X